| PART |
Description |
Maker |
| M63832GP M63832KP |
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY
|
Mitsubishi Electric Semiconductor
|
| M54523FP M54523P |
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M54587P M54587 M54587FP |
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M54562P12 M54562P |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE 8个单00mA的源类型达林顿晶体管阵列钳位二极
|
Mitsubishi Electric Semiconductor
|
| M54581P |
S-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
From old datasheet system
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M63823FP M63823GP M63823P M63823P/FP/GP |
Transistor Array
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| M54585KP |
Transistor Array
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| GMPSA14 |
The GMPSA14 is designed for darlington applications requiring extremely high current gain at collector to 500mA
NPN SILICON DARLINGTON TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| GMPSA13 |
The GMPSA13 is designed for darlington applications requiring extremely high current gain at collector to 500mA
NPN SILICON DARLINGTON TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| IR2410 |
7-Unit 400mA Darlington Transistor Array
|
Sharp
|
| M54566DP |
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
|
Mitsubishi Electric Semiconductor
|
